Growth and characterization of crack-free semipolar {1-101}InGaN/GaN multiple-quantum well on V-grooved (001)Si substrates

被引：20

作者：

Chen, Guan-Ting ^{[1
]}

Chang, Shih-Pang ^{[1
]}

Chyi, Jen-Inn ^{[1
,3
,4
]}

Chang, Mao-Nan ^{[2
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taoyuan County, Taiwan

[2] Natl Nano Device Labs, Div Nano Metrol, Hsinchu 30078, Taiwan

[3] Natl Cent Univ, Dept Opt & Photon, Taipei, Taiwan

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2946655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work elucidates the two-stage growth of GaN on V-grooved (001)Si substrates using metal-organic chemical vapor deposition. The first growth stage proceeds on the {111}Si sidewalls until GaN fills the V grooves. Then the second stage continues and leads to a semipolar surface with the {1-101}GaN facets. GaN films with thickness of over 1 mu m can be obtained without cracks by this two stage-growth. Excitation-power-dependent and time-resolved photoluminescence measurements confirm that the internal electric field in the InGaN/GaN multiple-quantum well (MQW) grown on this GaN template is indeed smaller than that of the MQW grown on (0001)GaN. (C) 2008 American Institute of Physics.

引用

页数：3

共 21 条

[1] Excitation-intensity-dependent photoluminescence in semiconductor quantum wells due to internal electric fields [J].

Chtanov, A ;

Baars, T ;

Gal, M .

PHYSICAL REVIEW B, 1996, 53 (08) :4704-4707

[2] Growth of blue GaN LED structures on 150-mm Si(111) [J].

Dadgar, A. ;

Hums, C. ;

Diez, A. ;

Blaesing, J. ;

Krost, A. .

JOURNAL OF CRYSTAL GROWTH, 2006, 297 (02) :279-282

[3]

Dadgar A, 2001, PHYS STATUS SOLIDI A, V188, P155, DOI 10.1002/1521-396X(200111)188:1<155::AID-PSSA155>3.0.CO

[4]

2-P

[5] RELAXATION PROCESS OF THE THERMAL STRAIN IN THE GAN/ALPHA-AL2O3 HETEROSTRUCTURE AND DETERMINATION OF THE INTRINSIC LATTICE-CONSTANTS OF GAN FREE FROM THE STRAIN [J].

DETCHPROHM, T ;

HIRAMATSU, K ;

ITOH, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1454-L1456

[6] High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD [J].

Egawa, T ;

Zhang, B ;

Ishikawa, H .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :169-171

[7] Al doping in (1-101)GaN films grown on patterned (001)Si substrate [J].

Hikosaka, T. ;

Honda, Y. ;

Yamaguchi, M. ;

Sawaki, N. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

[8] Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate [J].

Hikosaka, T ;

Narita, T ;

Honda, Y ;

Yamaguchi, M ;

Sawaki, N .

APPLIED PHYSICS LETTERS, 2004, 84 (23) :4717-4719

[9] Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE [J].

Honda, Y ;

Kameshiro, N ;

Yamaguchi, M ;

Sawaki, N .

JOURNAL OF CRYSTAL GROWTH, 2002, 242 (1-2) :82-86

[10] Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy [J].

Honda, Y ;

Kuroiwa, Y ;

Yamaguchi, M ;

Sawaki, N .

APPLIED PHYSICS LETTERS, 2002, 80 (02) :222-224

← 1 2 3 →