Analysis of resistivity in nano-interconnect: Full range (4.2-300K) temperature characterization

被引：22

作者：

Guillaumond, JF ^{[1
]}

Arnaud, L ^{[1
]}

Mourier, T ^{[1
]}

Fayolle, M ^{[1
]}

Pesci, O ^{[1
]}

Reimbold, G ^{[1
]}

机构：

[1] CEA, LETI, F-38926 Crolles 9, France

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219733

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The characterisation of the damascene copper line resistivity as a function of linewidth and temperature were carried out for sub 100nm feature size and down to 4.2 K. Mayadas model for grain boundary and sidewall scattering was used to analyse experimental data. The model is found to be in good agreement with experiment. The difficulty to isolate the different electron scattering mechanisms is highlighted. However, all the results show clearly that ITRS roadmap present requirement will not be respected in a close future.

引用

页码：132 / 134

页数：3

共 8 条

[1] THE CONDUCTIVITY OF THIN WIRES IN A MAGNETIC FIELD [J].