Ionized-cluster-beam deposition and electrical bistability of C-60-tetracyanoquinodimethane thin films

被引：40

作者：

Gao, HJ

Xue, ZQ

Wang, KZ

Wu, QD

Pang, S

机构：

[1] CHINESE ACAD SCI,BEIJING LAB VACUUM PHYS,BEIJING 100080,PEOPLES R CHINA

[2] BEIJING UNIV,DEPT RADIOELECTR,BEIJING 100871,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 16期

关键词：

D O I：

10.1063/1.116009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an ionized-cluster-beam (ICE) deposition and the electrical bistability of C-60-tetracyanoquinodimethane (TCNQ) thin films. The films are fabricated by using an ionized-cluster-beam deposition method in a high vacuum system. The as-deposited films were characterized by transmission electron microscopy and optical absorption spectroscopy, which verified the formation of the charge-transfer complex system in C-60-TCNQ thin films and the microstructure of these thin films. The structure and theelectrical property of the ICE deposited Ag-TCNQ thin films are also presented. The possible conductive mechanism of these ICE deposited thin films is discussed in the letter. (C) 1996 American Institute of Physics.

引用

页码：2192 / 2194

页数：3

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