Influence of quantum confinement on the critical points of the band structure of Si

被引：53

作者：

BenChorin, M ^{[1
]}

Averboukh, B ^{[1
]}

Kovalev, D ^{[1
]}

Polisski, G ^{[1
]}

Koch, F ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E16,D-85747 GARCHING,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.77.763

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The photoluminescence excitation technique is used to monitor the absorption characteristics of Si nanocrystals. Contributions from different critical points are identified, and their shift with reduced size is deduced. The enhancement of the oscillator strength of the indirect optical transitions due to the confinement is estimated.

引用

页码：763 / 766

页数：4

共 15 条

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