320 Gbit/s error-free demultiplexing using ultrafast optical gate monolithically integrating a photodiode and electroabsorption modulator

被引：22

作者：

Kodama, S ^{[1
]}

Yoshimatsu, T ^{[1
]}

Ito, H ^{[1
]}

机构：

[1] NTT Corp, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 17期

关键词：

D O I：

10.1049/el:20030813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 320 Gbit/s error-free demultiplexing operation with a receiver sensitivity of -18 dBm using a monolithic optical gate integrating a uni-travelling-carrier photodiode and a travelling-wave electroabsorption modulator has been demonstrated. High on/off ratios of 14 dB for adjacent channels and 28 dB for the others have also been achieved.

引用

页码：1269 / 1270

页数：2

共 5 条

[1]

ISHIBASHI T, 1997, OSA TOPS ULTRAFAST E, V13, P83

[2] Polarisation-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50GHz and driving voltage less than 2V [J].

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Hasumi, Y .

ELECTRONICS LETTERS, 1997, 33 (18) :1580-1581

[3] 320Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator [J].

Kodama, S ;

Yoshimatsu, T ;

Ito, H .

ELECTRONICS LETTERS, 2003, 39 (04) :383-385

[4] 160Gbit/s error-free demultiplexing by ultrafast optical gate monolithically integrating photodiode and electroabsorption modulator [J].

Kodama, S ;

Yoshimatsu, T ;

Ito, T ;

Ito, H ;

Ishibashi, T .

ELECTRONICS LETTERS, 2002, 38 (24) :1575-1576

[5]

KODAMA S, 2001, ELECTRON LETT, V37, P1580

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