C-doped semi-insulating GaNHFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance

被引：23

作者：

Choi, Y. C. ^{[1
]}

Shi, J. ^{[1
]}

Pophristic, M. ^{[2
]}

Spencer, M. G. ^{[1
]}

Eastman, L. F. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Velox Semicond Corp, Somerset, NJ 08873 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 06期

关键词：

D O I：

10.1116/1.2794058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High breakdown voltage (BV) AlGaN/GaN heterojunction field effect transistors (HFETs) with a low specific on-resistance (AR(DS(on))) were successfully fabricated using intentionally C-doped semi-insulating GaN buffers with a high resistivity on sapphire substrates. With the improvement of not only the resistivity of a C-doped GaN buffer but also the layout design near the gate feeding region, the fabricated devices exhibited a high BV of similar to 1600 V and low AR(DS(on)) of 3.9 m Omega cm(2). This result even reaches the 4H-SiC theoretical limit and the best ever reported for the high-power GaN-based HFETs realized on sapphire substrates to the best of our knowledge. (C) 2007 American Vacuum Society.

引用

页码：1836 / 1841

页数：6

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