BaMoO4 thin films prepared by electrochemical method at room temperature

被引:26
作者
Bi, J
Xiao, DQ [1 ]
Gao, DJ
Yu, P
Yu, GL
Zhang, W
Zhu, JG
机构
[1] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
[2] Sichuan Normal Univ, Coll Chem Sci, Chengdu 610066, Peoples R China
关键词
BaMoO4; electrochemical method; thin film;
D O I
10.1002/crat.200310116
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Highly crystallized BaMoO4 films were prepared on molybdenum substrates in Ba(OH)(2) solutions by electrochemical method at room temperature. The deposition conditions (reaction temperature and current density) during electrochemical formation were researched. The films were characterized by using the X-ray Diffraction (XRD), Scanning Electronic Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) analyses. The XRD analyses show that the films are good crystalline with single scheelite-type tetragonal structure; the SEM photographs show that the films are densely deposited with double tetragonal tapers in shape; and the XPS analyses reveal that the composition of the BaMoO4 films (embodied Ba2+, Mo6+ and O-2) is in agreement with stoichiometry. The optimum electrochemical conditions for BaMoO4 films formation are the lower reacting temperature (near room temperature) and the feasible current density (about 1 mA/cm(2)) (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:935 / 940
页数:6
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