From the Kondo regime to the mixed-valence regime in a single-electron transistor

被引：724

作者：

Goldhaber-Gordon, D ^{[1
]}

Göres, J

Kastner, MA

Shtrikman, H

Mahalu, D

Meirav, U

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

[2] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.81.5225

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. The Kondo effect is observed when an unpaired electron is localized within the transistor. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a crossover between the Kondo and mixed-valence regimes of the Anderson model.

引用

页码：5225 / 5228

页数：4

共 17 条

[1] THERMODYNAMIC, TRANSPORT, AND EXCITATION PROPERTIES OF CE IMPURITIES IN A MODEL METAL - KONDO RESONANCE AND UNIVERSALITY IN THE MIXED-VALENT REGIME [J].