Displacement energy measurements for ion-irradiated 6H-SiC

Single crystal 6H-SiC wafers were separately irradiated at 180 or 190 K with energetic He+, C+ and Si+ ion beams to doses ranging from 0.008 to 0.42 dpa, with corresponding damage levels ranging from isolated point defects to complete amorphization. The accumulation of disorder on the Si sublattice has been followed using in-situ RES measurements along the (0 0 0 1)-axial channeling direction. In conjunction with SRIM-97 simulations and the Kinchin-Pease approximation, the average displacement energy for the Si sublattice at each dose has been estimated from the damage profile and integrated disorder concentration. At low defect concentrations, these energies approach the threshold displacement energy for perfect crystals. (C) 1999 Elsevier Science B.V. All rights reserved.