Mechanism-based strain gradient crystal plasticity - I. Theory

被引:219
作者
Han, CS
Gao, HJ
Huang, YG
Nix, WD
机构
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Univ Illinois, Dept Mech & Ind Engn, Urbana, IL 61801 USA
关键词
dislocations; strengthening mechanisms; constitutive behavior; principles; elastic-plastic material; strain gradient plasticity;
D O I
10.1016/j.jmps.2004.08.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have been developing the theory of mechanism-based strain gradient plasticity (MSG) to model size-dependent plastic deformation at micron and submicron length scales. The core idea has been to incorporate the concept of geometrically necessary dislocations into the continuum plastic constitutive laws via the Taylor hardening relation. Here we extend this effort to develop a mechanism-based strain gradient theory of crystal plasticity. In this theory, an effective density of geometrically necessary dislocations for a specific slip plane is introduced via a continuum analog of the Peach-Koehler force in dislocation theory and is incorporated into the plastic constitutive laws via the Taylor relation. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1188 / 1203
页数:16
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