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1.3-mu m strained MQW-DFB lasers with extremely low intermodulation distortion for high-speed analog transmission
被引:9
作者:
Watanabe, H
Aoyagi, T
Takemoto, A
Takiguchi, T
Omura, E
机构:
[1] Optoelectron. Microwave Devices Lab., Mitsubishi Electric Corporation 4-1, Mizuhara, Itami
关键词:
D O I:
10.1109/3.502379
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The intermodulation distortion and the noise characteristics of 1.3-mu m strained multiquantum-well distributed feedback (MQW-DFB) lasers have been investigated under the modulation frequency of 1.9 GHz in connection with the device structure, In this study, a strained MQW with strain compensated layers has been introduced in order to increase in the quantum-well number and well width, This causes increase in the differential gain, resulting in increase of the resonance frequency (fr). The fr as high as 5.1 GHz/mW(1/2) has been obtained which is in good agreement with the theoretical calculation. In addition to the strained MQW structure, a new buried heterostructure entirely grown by MOCVD, named as FSBH (facet selective growth buried heterostructure), has been developed to minimize the leakage current which degrades L-I characteristics at high bias current causing the high distortion, The third-order-intermodulation distortion (IMD3) of -88 dBc and relative intensity noise (RIN) of -152 dB/Hz have been obtained under a two-tone test at 1.9 GHz. This suggests that this newly developed laser is quite suitable for high-speed subcarrier multiplexing transmission.
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页码:1015 / 1023
页数:9
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