High-resolution transmission electron microscopy investigation of the nanostructure of undoped and Pt-doped nanocrystalline pulsed laser deposited SnO2 thin films

被引:20
作者
Serventi, AM
Dolbec, R
El Khakani, MA
Saint-Jacques, RG
Rickerby, DG
机构
[1] INRS Energie Mat & Telecommun, Inst Natl Rech Sci, Varennes, PQ J3X 1S2, Canada
[2] Commiss European Communities, Joint Res Ctr, IHCP, I-21020 Ispra, Italy
基金
加拿大自然科学与工程研究理事会;
关键词
Coherent twin boundary; High-resolution transmission electron microscopy; Pulsed laser deposition;
D O I
10.1016/S0022-3697(03)00262-2
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Pulsed laser deposition (PLD) was used to grow nanocrystalline SnO2 thin films onto alumina substrates. The reactive PLD process was carried out at different substrate deposition temperatures (T-d) between 20 and 600 degreesC under an oxygen background pressure of 150 mtorr. The same PLD technique was used to produce SnO2 films in situ-doped with Pt (at the level of similar to 2 at. %) through the concomitant ablation of both SnO2 target and Pt strips. Conventional and high-resolution transmission electron microscopy (HRTEM) observations have revealed that the microstructure of the PLD SnO2 films is highly sensitive to their deposition temperature. Indeed, its changes from a porous granular structure with extremely fine equiaxed grains (similar to 4 nm diameter), at T-d = 20 degreesC to a very compact and textured columnar structure characterized by SnO2 columns (similar to 25 nm diameter) composed of grains of similar to 12 nm of diameter, at T-d = 600 T. In addition, the PLD SnO2 films were found to exhibit the highest nanoporosity at T-d = 300 degreesC which also coincides with the granular-to-columnar microstructural transition. On the other hand, the microstructure of the Pt-doped SnO2 films, deposited at 300 degreesC, was found to contain a high density of defects, such as twin boundaries and edge dislocations. By combining HRTEM and EDS microanalysis, we were able to show that the Pt-dopant self-organizes into spherical nanoparticles (1 -2 nm diameter) randomly distributed at the SnO2 grain boundaries. Finally, doping the films with such platinum nanoclusters is found to affect the SnO2 nanostructure by particularly reducing the SnO2 mean grain size (from similar to 10 nm when undoped to similar to 6 nm for the doped films). (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2097 / 2103
页数:7
相关论文
共 21 条
[1]  
ALANI R, 1992, MATER RES SOC SYMP P, V254, P43
[2]   TIN DIOXIDE THIN-FILM GAS SENSOR PREPARED BY CHEMICAL-VAPOR-DEPOSITION - INFLUENCE OF GRAIN-SIZE AND THICKNESS ON THE ELECTRICAL-PROPERTIES [J].
BRUNO, L ;
PIJOLAT, C ;
LALAUZE, R .
SENSORS AND ACTUATORS B-CHEMICAL, 1994, 18 (1-3) :195-199
[3]   Analysis of the noble metal catalytic additives introduced by impregnation of as obtained SnO2 sol-gel nanocrystals for gas sensors [J].
Cabot, A ;
Arbiol, J ;
Morante, JR ;
Weimar, U ;
Bârsan, N ;
Göpel, W .
SENSORS AND ACTUATORS B-CHEMICAL, 2000, 70 (1-3) :87-100
[4]   MODELING BIAS SPUTTER PLANARIZATION OF METAL-FILMS USING A BALLISTIC DEPOSITION SIMULATION [J].
DEW, SK ;
SMY, T ;
TAIT, RN ;
BRETT, MJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :519-523
[5]   Pulsed laser deposition of nanostructured tin oxide films for gas sensing applications [J].
El Khakani, MA ;
Dolbec, R ;
Serventi, AM ;
Horrillo, MC ;
Trudeau, M ;
Saint-Jacques, RG ;
Rickerby, DG ;
Sayago, I .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 77 (1-2) :383-388
[6]   Effect of the deposition temperature on the properties of iridium thin films grown by means of pulsed laser deposition [J].
M. A. El Khakani ;
B. Le Drogoff ;
M. Chaker .
Journal of Materials Research, 1999, 14 (8) :3241-3246
[7]  
Gleiter H., 1992, Nanostructured Materials, V1, P1, DOI 10.1016/0965-9773(92)90045-Y
[8]   SNO2 SENSORS - CURRENT STATUS AND FUTURE-PROSPECTS [J].
GOPEL, W ;
SCHIERBAUM, KD .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :1-12
[9]  
Ihokura K., 1994, STANNIC OXIDE GAS SE
[10]   THE ROLE OF NOBLE-METALS IN THE CHEMISTRY OF SOLID-STATE GAS SENSORS [J].
KOHL, D .
SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) :158-165