Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

被引:27
作者
Veber, Philippe [1 ]
Velazquez, Matias [1 ]
Jubera, Veronique [1 ]
Pechev, Stanislav [1 ]
Viraphong, Oudomsack [1 ]
机构
[1] Univ Bordeaux, CNRS, ICMCB, F-33608 Pessac, France
关键词
LASER; SESQUIOXIDES; REFINEMENT; NUCLEATION; OPERATION; OXIDES; TM3+;
D O I
10.1039/c1ce00015b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We discuss a new, cheap, simple, reliable and safe growth process of Yb3+-doped Y2O3 and Lu2O3 single crystals by a flux method, using an original, nontoxic solvent in a growth setup operative in air and at half the melting temperature of cubic RE2O3. Several mm(3)-sized Yb3+-doped Y2O3 and Lu2O3 single crystals were grown, the orientation, purity and Yb3+-concentration of which were characterized by means of X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy and electron probe microanalysis (EPMA). A preliminary characterization of Yb3+-doped cubic RE2O3 (RE = Y,Lu) single crystals' basic spectroscopic and laser parameters is presented.
引用
收藏
页码:5220 / 5225
页数:6
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