Control of the morphology of CSD-prepared (Ba,Sr)TiO3 thin films

被引：161

作者：

Hoffmann, S ^{[1
]}

Waser, R

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, Julich, Germany

[2] Univ Technol, Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, Aachen, Germany

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 6-7期

关键词：

films; precursors-organic; B; microstructure-final; dielectric properties; BaTiO3 and titanates;

D O I：

10.1016/S0955-2219(98)00430-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of precursor chemistry and deposition process conditions on the morphology of CSD-prepared (Ba,Sr) TiO3 thin films was investigated. By controlling the film formation process, the morphology of (Ba,Sr) TiO3 films grown on platinum coated silicon substrates at temperatures around 750 degrees C was tailored in order to achieve columnar grain structures. We extend the thermodynamic model for the nucleation process in Pb(Zr,Ti)O-3 thin films to the explanation of the crystallization behavior of (Ba,Sr)TiO3 thin films. The influence of the thin film microstructure on the dielectric proper ties is discussed with respect to the Curie-Weiss behavior of different BaTiO3 films. (C) 1999 Elsevier Science Limited All rights reserved.

引用

页码：1339 / 1343

页数：5

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