Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

被引：13

作者：

Fan, WJ ^{[1
]}

Li, MF ^{[1
]}

Chong, TC ^{[1
]}

Xia, JB ^{[1
]}

机构：

[1] ACAD SINICA, INST SEMICOND, NATL LAB SUPERLATTICES MICROSTRUCT, BEIJING 100083, PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 05期

关键词：

semiconductors; electronic band structure;

D O I：

10.1016/0038-1098(95)00700-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

引用

页码：381 / 384

页数：4

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