Investigation of discrimination enhancement in polysilsesquioxane based positive resist for ArF lithography

被引：14

作者：

Hatakeyama, J ^{[1
]}

Nakashima, M ^{[1
]}

Kaneko, I ^{[1
]}

Nagura, S ^{[1
]}

Ishihara, T ^{[1
]}

机构：

[1] Shin Etsu Chem Co Ltd, Specialty Chem Res Ctr, Niigata 9420091, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

193 nm lithography; bi-layer; surface imaging; silsesquioxane; ArF; O2-RIE;

D O I：

10.1117/12.312454

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In order to establish surface imaging process using O-2-RIE on ArF lithography, silicon containing bi-layer resists have been investigated. We synthesized cyclohexyl pendant silsesquioxane polymer to obtain high transparency at ArF wavelength. This polymer has ladder siloxane structure with high Si density (13 wt%), over 80%/@0.35um transmittance at 193nm, and has carboxylic acid partially protected by acid labile group for TMAH aq. development. Addition of base enhanced the slope of deprotecting reaction and suppressed acid diffusion. The function of specific amines as acid quencher was considered to cause "Proton-Jumping". Substituting of carboxylic acid by alcohol type polar linkage increased alkali tolerance, adhesion force and polymer Tg. Standard 2.38wt% TMAH developer was applied and expanded the dissolution rate gap. For further improvement of the resolution, we increased alkali tolerance by introduction of tricyclodecanyl pendant and optimized alkali concentration of developer. As a result, suitable dissolution curve for surface imaging resists was realized and rectangular patterns were observed on bottom ARC.

引用

页码：62 / 72

页数：3