Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

被引：27

作者：

Fromherz, T ^{[1
]}

Kruck, P ^{[1
]}

Helm, M ^{[1
]}

Bauer, G ^{[1
]}

Nutzel, JF ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85784 GARCHING,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 25期

关键词：

D O I：

10.1063/1.115746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p(s)=2.8x10(12) cm(-2) both transverse magnetic and transverse electric polarized absorptions have been observed, and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly little sensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsivity. (C) 1996 American Institute of Physics.

引用

页码：3611 / 3613

页数：3

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