Ge quantum dot molecules and crystals:: Preparation and properties

被引：34

作者：

Dais, Christian ^{[1
]}

Solak, Harun H.

Ekinci, Yasin

Mueller, Elisabeth

Sigg, Hans

Gruetzmacher, Detlev

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 13期

关键词：

Ge quantum dots; quantum dot crystal; extreme ultra-violet interference lithography;

D O I：

10.1016/j.susc.2006.12.053

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Templated self-organization has been used to prepare two-dimensional arrays as well as three-dimensional quantum dot crystals (QDC) containing Ge dots in a Si host crystal. Si(1 0 0) substrates have been patterned with two-dimensional hole gratings using extreme ultra-violet interference lithography (EUV-IL) and reactive ion etching. The EUV-IL was realized by multiple beam diffraction using Cr gratings on SiNx membranes fabricated by e-beam lithography. Si/Ge overgrowth was performed by molecular beam epitaxy. The impact of the microscopic shape and size of the prepattern using the mask design and the EUV-IL exposure dose as parameters on the Ge dot nucleation has been studied with atomic force microscopy, transmission electron microscopy and photoluminescence measurements. Adjusting the growth parameters in multiple layer deposition the initial two-dimensional configuration was transferred into three-dimensional QDC. (c) 2007 Elsevier B. V. All rights reserved.

引用

页码：2787 / 2791

页数：5

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