Detailed energetic interactions of adsorbed Si dimers on Si(001)

被引：8

作者：

Carpinelli, JM ^{[1
]}

Swartzentruber, BS ^{[1
]}

机构：

[1] Sandia Natl Lab, Albuquerque, NM 87185 USA

来源：

SURFACE SCIENCE | 1998年 / 411卷 / 1-2期

关键词：

diffusion and migration; low index single crystal surfaces; scanning tunneling microscopy; silicon; surface defects; surface diffusion;

D O I：

10.1016/S0039-6028(98)00400-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated adsorbed Si dimers on Si(001) at similar to 100 degrees C with atom-tracking STM to determine the effect of various local environments on surface dynamics. Specifically, we find an asymmetry in the dimer diffusion along a buckled A-type step. We also measure dimer repulsion and attraction respectively from in-row and adjacent-row vacancy defects. These findings lend insight into the nature of the dimer-substrate bond and defect structure. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：L828 / L833

页数：6

共 19 条

[1]

[Anonymous], COMMUNICATION

[2] SI BINDING AND NUCLEATION ON SI(100) [J].