Phonon spectrum of wurtzite GaN and AlN experiment and theory

被引:25
作者
Davydov, VY
Kitaev, YE
Goncharuk, IN
Tsaregorodtsev, AM
Smirnov, AN
Lebedev, AO
Botnaryk, VM
Zhilyaev, YV
Smirnov, MB
Mirgorodsky, AP
Semchinova, OK
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Silicate Chem, St Petersburg 199155, Russia
[3] Univ Hannover, LFI, D-30167 Hannover, Germany
关键词
semiconductors; crystal structure and symmetry; phonons; inelastic light scattering;
D O I
10.1016/S0022-0248(98)00239-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AIN at room and liquid helium temperatures. A complete group-theory analysis of phonon symmetry and optical selection rules permitted us to assign the observed features in the second-order Raman spectra to combinations of phonons at the Gamma, K, and M points of the Brillouin zone. The joint treatment of these results with lattice dynamical calculations based on phenomenological interatomic potential model allowed us to obtain the reliable data on phonon dispersion curves in bulk GaN and AIN. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:656 / 660
页数:5
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