Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs

被引:8
作者
Ganichev, SD [1 ]
Danilov, SN
Bel'kov, VV
Ivchenko, EL
Ketterl, H
Vorobjev, LE
Bichler, M
Wegscheider, W
Prettl, W
机构
[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源
PHYSICA E | 2001年 / 10卷 / 1-3期
关键词
photogalvanic effect; monopolar spin orientation;
D O I
10.1016/S1386-9477(01)00052-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on the first observation of the circular photogalvanic effect (CPCE) induced by optical monopolar spin orientation of holes in p-doped quantum-well structures. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation, The effect has been observed in (0 0 1)- and (3 1 1)A-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far -infrared radiation. The photocurrent is proportional to the light intensity at low power levels and gradually saturates with increasing intensity. The CPGE can be utilized to investigate separately spin polarization of electrons and holes and to determine spin-relaxation times. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:52 / 56
页数:5
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