Relationship between molecular structure and electrical performance of oligothiophene organic thin film transistors

被引:391
作者
Halik, M
Klauk, H
Zschieschang, U
Schmid, G
Ponomarenko, S
Kirchmeyer, S
Weber, W
机构
[1] Infineon Technol AG, D-91052 Erlangen, Germany
[2] HC Starck, D-51368 Leverkusen, Germany
[3] Infineon Technol AG, D-81730 Munich, Germany
关键词
D O I
10.1002/adma.200304654
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic thin film transistors (TFTs) based on alkyl-substituted oligothiophenes with varying chromophore and alkyl side-chain length have been fabricated. The TFT performance is shown to depend on side-chain length and contact configuration, but is found to be relatively insensitive to chromophore length. Mobilities as large as 1.1 cm(2)/V s were obtained. TFTs with ultra-thin self-assembled monolayer gate dielectrics have also been prepared and investigated.
引用
收藏
页码:917 / +
页数:7
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