Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

被引：254

作者：

Chern, GD ^{[1
]}

Tureci, HE

Stone, AD

Chang, RK

Kneissl, M

Johnson, NM

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1605792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report unidirectional emission from lasing in In0.09Ga0.91N/In0.01Ga0.99N multiple-quantum-well spiral micropillars. Our imaging technique shows that the maximum emission comes from the notch of the spiral microcavities at an angle about 40degrees from the normal of the notch. At room temperature, the spiral microcavity lases near 400 nm when optically pumped with 266 or 355 nm light. A reduction in the lasing threshold and an improvement in unidirectionality occurs when the microcavity is selectively pumped near its boundary. (C) 2003 American Institute of Physics.

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页码：1710 / 1712

页数：3

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