The influence of SiN films on negative bias temperature instability and characteristics in MOSFET's

被引：4

作者：

Sasada, K ^{[1
]}

Arimoto, M ^{[1
]}

Nagasawa, H ^{[1
]}

Nishida, A ^{[1
]}

Aoe, H ^{[1
]}

Dan, T ^{[1
]}

Fujiwara, S ^{[1
]}

Matsushita, Y ^{[1
]}

Yodoshi, K ^{[1
]}

机构：

[1] Sanyo Elect Co Ltd, Ctr Microelect Res, Gifu 50301, Japan

来源：

ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 1998年

关键词：

D O I：

10.1109/ICMTS.1998.688072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated a method of suppressing both negative bias temperature instability (NBTI) in PMOSFET's and initial characteristic degradation in NMOSFET's, using test structures constructed by several SiN films. It was found that the thickness and area of SiN films play a crucial role in order to suppress both of them. In this work, two ways of experiments, in which SiN films were deposited all over the wafer and the films were patterned, were carried out. In the former, the thickness of SiN films is strictly limited to from 6 nm to 7 nm in order to suppress both NBTI in PMOSFET's and initial characteristic degradation in NMOSFET's. In the latter, the thickness is not strictly limited. NBTI in PMOSFET's and initial characteristic degradation can be suppressed by constructing SiN film area so that hydrogen reaches the gate oxide but water does not reach the gate oxide. The area of SiN films can be easily determined by taking water diffusion into account.

引用

页码：207 / 210

页数：4