Evaluation of InAlAs Schottky characteristics grown by MOCVD

被引：4

作者：

Ohshima, T ^{[1
]}

Moriguchi, H ^{[1
]}

Shigemasa, R ^{[1
]}

Gotoh, S ^{[1
]}

Tsunotani, M ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 193, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky characteristics of InAlAs grown by MOCVD has been evaluated. InAlAs Schottky characteristics is strongly affected by MOCVD growth temperature. The reverse current of InAlAs grown at 700 degrees C is more than one order of magnitude larger than that for 750 degrees C. From DLTS measurement, a large signal due to an electron trap with an activation energy of 0.45 eV has been observed in InAlAs grown at 700 degrees C. The results of C-V, Hall and SIMS measurements suggest that the trap is acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs grown at 700 degrees C is thought to be conduction through the trap.

引用

页码：761 / 764

页数：4