Enhanced grain growth in porous materials from α- and β-SiC powder mixtures

被引:10
作者
Tanaka, H
Nishimura, T
Hirosaki, N
Jeong, DH
机构
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Res Inst Ind Sci & Technol, Pohang 790600, Kyungbuk, South Korea
关键词
porous materials; silicon carbide; grain growth; polytype; transformation;
D O I
10.2109/jcersj.113.51
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
alpha- and beta-SiC powders and their powder mixtures with 0.3 mass% of AIB(2) additive were sintered at 2200degreesC. Porous materials having approximately 55-57% theoretical density were obtained from the powders. Grains in the porous material prepared from alpha-SiC powder grew into round-sbaped grains with a 4 mum size, and those prepared from beta-SiC powder grew into plate-shaped grains with the same size. Grain growth was considerably enhanced in the powder mixtures forming a locking structure with plate-shaped grains. The mean grain sizes of the porous materials from the powder mixtures were 5.6-8.2 mum. beta(3C)-SiC in the powder mixtures was transformed completely to alpha, that is, 6H and small amounts of 4H and 15R. An energy difference accompanied by beta-to-alpha transformation enhanced grain growth. The strength of the porous materials prepared from the mixtures was 70-83 MPa.
引用
收藏
页码:51 / 54
页数:4
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