Dangling-bond defects and hydrogen passivation in germanium

被引：138

作者：

Weber, J. R. ^{[1
]}

Janotti, A.

Rinke, P.

Van de Walle, C. G.

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期

基金：

美国国家科学基金会;

关键词：

TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; SEMICONDUCTORS; INTERFACE; GATE; MOSFETS; SILICON; SI/SIO2; TRAPS;

D O I：

10.1063/1.2793184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate the effects of dangling bonds (DBs) and their interaction with hydrogen. We find that Ge DBs give rise to electronic levels below the valence-band maximum. They therefore occur exclusively in the negative charge state, explaining why they cannot be observed with electron spin resonance. The associated fixed charge is likely responsible for threshold-voltage shifts and poor performance of n-channel transistors. We also find that passivation of DBs by hydrogen will be ineffective because interstitial hydrogen is also stable exclusively in the negative charge state. (C) 2007 American Institute of Physics.

引用

页数：3

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