Oscillator strength anomalies in the neon isoelectronic sequence with applications to x-ray laser modelling

被引:32
作者
Ivanova, EP
Grant, IP
机构
[1] Math Inst, Oxford OX1 3LB, England
[2] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Region, Russia
关键词
D O I
10.1088/0953-4075/31/13/007
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have made relativistic calculations of oscillator strengths in the isoelectronic sequence of neon for application to the modelling of x-ray laser systems. We find that the level ordering can change at certain atomic numbers, and that this is often associated with a vanishing oscillator strength in one lasing channel and an enhancement of the oscillator strength in a competing channel. It will be necessary to include the effect of plasma microfields to properly model emission spectra of a dense plasma.
引用
收藏
页码:2871 / 2883
页数:13
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