Direct formation of self-assembled quantum dots under tensile strain by heteroepitaxy of PbSe on PbTe (111)

被引：90

作者：

Pinczolits, M ^{[1
]}

Springholz, G ^{[1
]}

Bauer, G ^{[1
]}

机构：

[1] Johannes Kepler Univ, Inst Halbleitertech, A-4040 Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 02期

关键词：

D O I：

10.1063/1.121770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct growth of tensile-strained PbSe quantum dots by molecular beam epitaxy on 5.5% lattice mismatched PbTe (111) is investigated by atomic force microscopy and in situ reflection high energy electron diffraction. After wetting layer formation, two types of PbSe islands are formed distinguishable in size and ordering behavior. All islands exhibit a well defined pyramidal shape with triangular base and steep (100) side facets. In addition, the dots exhibit a remarkably narrow size distribution with a relative variation of height and width as low as +/-7%. (C) 1998 American Institute of Physics. [S0003-6951 (98)04728-7].

引用

页码：250 / 252

页数：3

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