Lithographic performance of a dry-etch stable methacrylate resist at 193 nm

被引：30

作者：

Dammel, RR ^{[1
]}

Ficner, S ^{[1
]}

Oberlander, J ^{[1
]}

Klauck-Jacobs, A ^{[1
]}

Padmanaban, M ^{[1
]}

Khanna, DN ^{[1
]}

Durham, DL ^{[1
]}

机构：

[1] Clariant Corp, AZ Elect Mat, Somerville, NJ 08876 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

193 nm lithography; methacrylate resist; 2-methyl-adamantane methacrylate; mevalonic lactone methacrylate;

D O I：

10.1117/12.312393

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High resolution performance down to the 0.13 mu m level is demonstrated in a methacrylate resist with pendent polycyclic side groups. The best performance is achieved with a bottom coat although interactions with the resist were still observed which led to the presence of scum in fine lines and to a large dose change relative to silicon. The demonstrated dry etch rate of the resist was found to be about 10% higher than APEX-E; predictions based on the ring parameter would have led us to expect a more favorable etch rate. The observed discrepancy has led us to speculate on possible exposure of the resist by the plasma environment and loss of the etch resistant polycyclic unit through evaporation.

引用

页码：144 / 151

页数：2