Electrical and optical properties of F-doped textured SnO2 films deposited by APCVD

This paper presents the structural, electrical and optical properties of transparent conducting F-doped textured SnO2 films prepared by atmosphere pressure chemical vapour deposition (APCVD). Polycrystalline SnO2:F films having a variable preferred orientation have been obtained with resistivity as low as 5 x 10(-4) Omega cm, with carrier concentrations between 3.5 x 10(20) and 7 x 10(20) cm(-3), and Hall mobilities from 15.7 to 20.1 cm(2)/V/s. The average transmittance (including diffusion transmittance) is as high as 94% in the wavelength range of the visible spectrum and the maximum infrared reflectance reaches 92% for a film 655 nm thick. The figure of merit phi(TC) = T-10/R(sh) (7.12 x 10(-2) S) of these films is the highest amongst the results reported on doped SnO2 films.