Image sensors in TFA technology -: Status and future trends

被引：12

作者：

Böhm, M ^{[1
]}

Blecher, F ^{[1
]}

Eckhardt, A ^{[1
]}

Seibel, K ^{[1
]}

Schneider, B ^{[1
]}

Sterzel, J ^{[1
]}

Benthien, S ^{[1
]}

Keller, H ^{[1
]}

Lulé, T ^{[1
]}

Rieve, P ^{[1
]}

Sommer, M ^{[1
]}

Van Uffel, B ^{[1
]}

Librecht, F ^{[1
]}

Lind, RC ^{[1
]}

Humm, L ^{[1
]}

Efron, U ^{[1
]}

Roth, E ^{[1
]}

机构：

[1] Univ Gesamthsch Siegen, Inst Halbleiterelekt, D-57068 Siegen, Germany

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Image sensors in TFA (Thin Film on ASIC) technology have been successfully fabricated and tested. This paper provides a survey of TFA research results so far and outlines future perspectives. The properties of different a-Si:H b/w and color thin film detectors are evaluated, including spectral sensitivity, dark current, temperature influence and transient behavior. Furthermore several TFA prototypes and emerging concepts are presented, ranging from a simple one-transistor cell design to a locally autoadaptive sensor.

引用

页码：327 / 338

页数：12

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