A novel Ir/IrO2/Pt-PZT-Pt/IrO2/Ir capacitor for a highly reliable mega-scale FRAM

被引：15

作者：

Jung, D ^{[1
]}

Kim, H ^{[1
]}

Song, YJ ^{[1
]}

Jang, N ^{[1
]}

Koo, B ^{[1
]}

Lee, S ^{[1
]}

Park, S ^{[1
]}

Park, Y ^{[1
]}

Kim, K ^{[1
]}

机构：

[1] Samsung Elect Co, Technol Dev, Memory Device Business, Yogin, Kyungki Do, South Korea

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel Ir/IrO2/Pt-PZT-Pt/IrO2/Ir capacitor is proposed for a highly reliable mega-scale FRAM. It was observed that charge degradation in retention test depends on the condition of the interface between top electrode and PZT thin film in ferroelectric capacitor. Nonvolatile polarization value of the novel capacitor after the retention acceleration is the 4.7 times larger than that of Ir/IrO2-PZT-Pt/IrO2/Ir capacitor. The novel Pt-inserted capacitor shows a great endurance up to 10(11) fatigue cycles. The 4Mb FRAM device with Ir/IrO2/Pt-PZT-Pt/IrO2/Ir capacitor has a wide sensing window of 90 fC even after baking at 125 degreesC for 88 hours.

引用

页码：801 / 804

页数：4

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