InGaAs nano-pillar array formation on partially masked InP(III)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application

被引：42

作者：

Akabori, M ^{[1
]}

Takeda, J ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, RCIQE, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

NANOTECHNOLOGY | 2003年 / 14卷 / 10期

关键词：

D O I：

10.1088/0957-4484/14/10/303

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the selective area metal-organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked TnP(1 1 1)B substrate. This technique is very promising as a way to form semiconductor two-dimensional photonic crystals (2DPCs) suitable for infrared optical fibre communication. We successfully formed uniform hexagonal 2DPCs having vertical (110) facet sidewalls on 400 nm-pitch masked substrates. We observed vertical growth enhancement as well as the lateral overgrowth suppression for high aspect ratio InGaAs nano-pillar array formation under high growth-rate, long growth-time, and narrow window-opening conditions. We verified infrared emission from the InGaAs nano-pillar array by low-temperature photoluminescence measurement.

引用

页码：1071 / 1074

页数：4

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