Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

被引：75

作者：

Mukai, K ^{[1
]}

Nakata, Y ^{[1
]}

Shoji, H ^{[1
]}

Sugawara, M ^{[1
]}

Ohtsubo, K ^{[1
]}

Yokoyama, N ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 16期

关键词：

D O I：

10.1049/el:19981075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lasers with a new type of quantum dot achieve low threshold current and high output power. By supplying a small amount of InAs and GaAs alternately on GaAs substrates, dots with high uniformity and high emission efficiency were self-assembled. The lasers exhibited a threshold current of 5.4 mA, a current density of 160 A/cm(2), and an output power of 110 mW at room temperature.

引用

页码：1588 / 1590

页数：3