Lattice dynamics of zinc-blende GaN and AlN .1. Bulk phonons

被引：45

作者：

Zi, J ^{[1
]}

Wan, X ^{[1
]}

Wei, GH ^{[1
]}

Zhang, KM ^{[1
]}

Xie, XD ^{[1
]}

机构：

[1] FUDAN UNIV, SURFACE PHYS LAB, SHANGHAI 200433, PEOPLES R CHINA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 35期

关键词：

D O I：

10.1088/0953-8984/8/35/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lattice dynamics of zinc-blende GaN and AlN were studied theoretically using a two-parameter Keating potential together with the long-range Coulomb interactions. Phonon frequencies transformed from those of the wurtzite counterparts were used to determine the two Keating parameters and the effective charge. We present for the first time the phonon dispersion curves for zinc-blende GaN and AlN. An interesting feature was found for the phonons propagating along the [110] direction, which does not exist in other III-V semiconductors.

引用

页码：6323 / 6328

页数：6

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