Broad-band microwave power amplifiers in GaN technology

被引：8

作者：

Krishnamurthy, K ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

Rodwell, MJW ^{[1
]}

Long, SI ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000 | 2000年

关键词：

D O I：

10.1109/GAAS.2000.906267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report lumped power amplifiers with > 4.4 W saturated output power over 2 - 8 GHz bandwidth in a GaN HEMT technology. Peak output power and PAE are 5.12 W and 21 % respectively at 6 GHz, under class-A operation. Also reported are GaAs MESFET / GaN HEMT cascode distributed amplifiers with 1 - 9 GHz bandwidth and with peak output power and PAE of 1.35 W and 14% respectively at 8 GHz.

引用

页码：33 / 36

页数：4

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