Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene

被引:138
作者
Martin, J. [1 ]
Feldman, B. E. [1 ]
Weitz, R. T. [1 ]
Allen, M. T. [1 ]
Yacoby, A. [1 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
基金
美国国家科学基金会;
关键词
SINGLE-ELECTRON TRANSISTOR; BROKEN-SYMMETRY STATES; BERRYS PHASE;
D O I
10.1103/PhysRevLett.105.256806
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Bilayer graphene has attracted considerable interest due to the important role played by many-body effects, particularly at low energies. Here we report local compressibility measurements of a suspended graphene bilayer. We find that the energy gaps at filling factors nu = +/- 4 do not vanish at low fields, but instead merge into an incompressible region near the charge neutrality point at zero electric and magnetic field. These results indicate the existence of a zero-field ordered state and are consistent with the formation of either an anomalous quantum Hall state or a nematic phase with broken rotational symmetry. At higher fields, we measure the intrinsic energy gaps of broken-symmetry states at nu = 0, +/- 1, and +/- 2, and find that they scale linearly with magnetic field, yet another manifestation of the strong Coulomb interactions in bilayer graphene.
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页数:4
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共 41 条
[1]  
BAO W, ARXIV10050033
[2]   Intra-Landau-level cyclotron resonance in bilayer graphene [J].
Barlas, Yafis ;
Cote, R. ;
Nomura, K. ;
MacDonald, A. H. .
PHYSICAL REVIEW LETTERS, 2008, 101 (09)
[3]   Compressibility of the electron gas in bilayer graphene [J].
Borghi, Giovanni ;
Polini, Marco ;
Asgari, Reza ;
MacDonald, A. H. .
PHYSICAL REVIEW B, 2010, 82 (15)
[4]   Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].
Castro, Eduardo V. ;
Novoselov, K. S. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Dos Santos, J. M. B. Lopes ;
Nilsson, Johan ;
Guinea, F. ;
Geim, A. K. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (21)
[5]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[6]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[7]   Intrinsic Zeeman effect in graphene [J].
Ezawa, Motohiko .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2007, 76 (09)
[8]   Broken-symmetry states and divergent resistance in suspended bilayer graphene [J].
Feldman, Benjamin E. ;
Martin, Jens ;
Yacoby, Amir .
NATURE PHYSICS, 2009, 5 (12) :889-893
[9]   Quantum-hall activation gaps in graphene [J].
Giesbers, A. J. M. ;
Zeitler, U. ;
Katsnelson, M. I. ;
Ponomarenko, L. A. ;
Mohiuddin, T. M. ;
Maan, J. C. .
PHYSICAL REVIEW LETTERS, 2007, 99 (20)
[10]   Energy Gaps at Neutrality Point in Bilayer Graphene in a Magnetic Field [J].
Gorbar, E. V. ;
Gusynin, V. P. ;
Miransky, V. A. .
JETP LETTERS, 2010, 91 (06) :314-318