Metastable structures and critical thicknesses: Ag on Si(111)-7x7

被引：72

作者：

Huang, L ^{[1
]}

Chey, SJ ^{[1
]}

Weaver, JH ^{[1
]}

机构：

[1] Univ Minnesota, Dept Mat Sci & Chem Engn, Minneapolis, MN 55455 USA

来源：

SURFACE SCIENCE | 1998年 / 416卷 / 1-2期

关键词：

epitaxy; growth; scanning tunneling microscopy; silicon; silver; surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(98)00627-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy was used to investigate recrystallization of nonequilibrium thin films of Ag grown on Si(111)-7 x 7 at 50 K. At this temperature, diffusion is limited and highly unstable microstructures are produced. Warming to 300 K allows atom redistribution and recrystallization that produces flat, pinhole-free films when the amount of material deposited exceeds 6 ML but multilayer pits are observed for thinner films. This planar film structure is stabilized by electronic contributions to the free energy. Growth at 300 K produces three dimensional structures that are constrained from interrogating the planar configuration. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L1101 / L1106

页数：6

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