Watching GaN nanowires grow

被引：166

作者：

Stach, EA ^{[1
]}

Pauzauskie, PJ

Kuykendall, T

Goldberger, J

He, RR

Yang, PD

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Div Sci Mat, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2003年 / 3卷 / 06期

关键词：

D O I：

10.1021/nl034222h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self-catalytic vapor-liquid-solid (VLS) mechanism. High temperature thermal decomposition of GaN in a vacuum yields nanoscale Ga liquid droplets and gallium/nitrogen vapor species for the subsequent GaN nanowire nucleation and growth. This is the first direct observation of self-catalytic growth of nanowires; via the VLS mechanism and suggests new strategies for synthesizing electronically pure single-crystalline semiconductor nanowires.

引用

页码：867 / 869

页数：3

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