Influence of microstructure on thermal stability of spin-valve multilayers

被引:41
作者
Maesaka, A [1 ]
Sugawara, N [1 ]
Okabe, A [1 ]
Itabashi, M [1 ]
机构
[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan
关键词
D O I
10.1063/1.367880
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the influence of microstructure on the thermal degradation of giant magnetoresistance Delta R on,spin-valve multilayers constructed by IrMn/CoFe/Cu/CoFe/NiFe, using transmission electron microscopy and energy dispersive x-ray spectroscopy. We found that the main cause of thermal degradation at about 250 degrees C is the interlayer diffusion along the grain boundary, which had more influence on Delta R than the compositional mixing at the multilayer interface. The polycrystal spin-valve multilayers deposited on Ta and CoZrTa underlayers had rapid degradation of Delta R above the annealing temperature of 225 degrees C, resulting in 16% and 20% degradation at 275 degrees C, respectively. A Ta underlayer with amorphous structure has the effect of reducing the density of the grain boundary by improving the surface smoothness, as compared with a crystalline CoZrTa underlayer, leading to slightly less degradation. By contrast, a spin-valve epitaxial layer deposited on a MgO(lll) substrate brought about a marked reduction of the thermal degradation of Delta R to within 3%, even at 275 degrees C, due to a remarkable reduction of crystallographic defects like the grain boundary. (C) 1998 American Institute of Physics.
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页码:7628 / 7634
页数:7
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