Transmission electron study of heteroepitaxial growth in the BiSrCaCuO system

被引:7
作者
Chaiken, A [1 ]
Wall, MA [1 ]
Howell, RH [1 ]
Bozovic, I [1 ]
Eckstein, JN [1 ]
Virshup, GF [1 ]
机构
[1] VARIAN ASSOCIATES INC,EL GINZTON RES LAB,PALO ALTO,CA 94304
关键词
D O I
10.1557/JMR.1996.0202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Films of Bi2Sr2CaCu2O8 and Bi2Sr2CuO6 have been grown using Atomic-Layer-by-layer Molecular Beam Epitaxy (ALL-MBE) on lattice-matched substrates. These materials have been combined with layers of closely related metastable compounds like Bi2Sr2Ca7Cu8O20 (2278) and rare-earth-doped compounds like Bi2Sr2DyxCa1-xCu2O8 (Dy:2212) to form heterostructures with unique superconducting properties, including superconductor/insulator multilayers and tunnel junctions. Transmission electron microscopy (TEM) has been used to study the morphology and microstructure of these heterostructures. These TEM studies shed light on the physical properties of the films, and give insight into the growth mode of highly anisotropic solids like Bi2Sr2CaCu2O8.
引用
收藏
页码:1609 / 1615
页数:7
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