Multifunctional integrated photonic switches

被引:27
作者
Demir, HV [1 ]
Sabnis, VA
Fidaner, O
Zheng, JF
Harris, JS
Miller, DAB
机构
[1] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA
[2] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
[3] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
[4] Translucent Inc, Palo Alto, CA 94303 USA
[5] Intel Corp, Santa Clara, CA 95052 USA
基金
美国国家科学基金会;
关键词
integrated optoelectronic devices; modulators; photonic switches; quantum-well (QW) devices;
D O I
10.1109/JSTQE.2004.841715
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Traditional optical-electronic-optical (o-e-o) conversion in today's optical networks requires cascading separately packaged electronic and optoelectronic chips and propagating high-speed electrical signals through and between these discrete modules. This increases the packaging and component costs, size, power consumption, and. heat dissipation. As a remedy, we introduce a novel, chip-scale photonic switching architecture that operates by confining high-speed electrical signals in a compact optoelectronic chip and provides multiple network functions on such a single chip. This new technology features low optical and electrical power consumption, small installation space, high-speed operation, two-dimensional scalability, and remote electrical configurability. In this paper, we present both theoretical and experimental discussion of our monolithically integrated photonic switches that incorporate quantum-well waveguide modulators directly driven by on-chip surface-illuminated photodetectors. These switches can be conveniently arrayed two-dimensionally on a single chip to realize a number of network functions. Of those, we have experimentally demonstrated arbitrary wavelength conversion across 45 nm and dual-wavelength broadcasting over 20 nm, both spanning the telecommunication center band (1530-1565 nm) at switching speeds up to 2.5 Gb/s. Our theoretical calculations predict the capability of achieving optical switching at rates in excess of 10 Gb/s using milliwatt-level optical and electrical switching powers.
引用
收藏
页码:86 / 96
页数:11
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