Pattern uniformity control in room-temperature imprint lithography

被引:19
作者
Hong, PS [1 ]
Lee, HH [1 ]
机构
[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea
关键词
D O I
10.1063/1.1613363
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nonuniformity in patterning that can arise in room-temperature imprint lithography is analyzed and a condition is presented under which the uniformity is assured. The condition is developed in such a way that the elastic recovery of stain-hardened polymer after the mold is removed does not cause the nonuniformity. Experimental testing of the condition reveals that it is a reliable criterion for uniform patterning. (C) 2003 American Institute of Physics.
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收藏
页码:2441 / 2443
页数:3
相关论文
共 22 条
[1]   Nano-indentation of polymeric surfaces [J].
Briscoe, BJ ;
Fiori, L ;
Pelillo, E .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (19) :2395-2405
[2]   Identification of the viscoplastic behavior of a polycarbonate based on experiments and numerical modeling of the nano-indentation test [J].
Bucaille, JL ;
Felder, E ;
Hochstetter, G .
JOURNAL OF MATERIALS SCIENCE, 2002, 37 (18) :3999-4011
[3]   Sub-10 nm imprint lithography and applications [J].
Chou, SY ;
Krauss, PR ;
Zhang, W ;
Guo, LJ ;
Zhuang, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2897-2904
[4]   IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS [J].
CHOU, SY ;
KRAUSS, PR ;
RENSTROM, PJ .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3114-3116
[5]   Study of elastic modulus and yield strength of polymer thin films using atomic force microscopy [J].
Du, BY ;
Tsui, OKC ;
Zhang, QL ;
He, TB .
LANGMUIR, 2001, 17 (11) :3286-3291
[6]   Analysis of nanoindentation load-displacement loading curves [J].
Hainsworth, SV ;
Chandler, HW ;
Page, TF .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (08) :1987-1995
[7]  
Johnson K. L., 1987, CONTACT MECH
[8]  
Khang DY, 2001, ADV MATER, V13, P749, DOI 10.1002/1521-4095(200105)13:10<749::AID-ADMA749>3.0.CO
[9]  
2-7
[10]   Fabrication of three-dimensional microstructures by soft molding [J].
Kim, YS ;
Suh, KY ;
Lee, HH .
APPLIED PHYSICS LETTERS, 2001, 79 (14) :2285-2287