Application of metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to active-matrix organic light-emitting diode displays

被引：11

作者：

Meng, ZG ^{[1
]}

Chen, HY ^{[1
]}

Qiu, CF ^{[1
]}

Wang, LD ^{[1
]}

Kwok, HS ^{[1
]}

Wong, M ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Active matrix (AM) flat-panel displays (FPDs) based on organic light-emitting diodes (OLEDs) are being hotly pursued as alternatives to liquid crystal displays (LCDs). Unlike LC pixels, which are voltage-driven, OLED pixels are current-driven, Since the amorphous silicon (a-Si) thin-film transistors (TFTs) typically used in LCDs suffer from limited current-driving capability and high photo-sensitivity, polycrystalline silicon (poly-Si) TFTs based on metal-induced unilateral crystallization (MIUC) of a-Si are investigated for AMOLED displays. Particular attentions are paid to (1) optimizing TFT structural design and (2) resolving issues related to the integration of MIUC TFT and OLED.

引用

页码：611 / 614

页数：4