Room-temperature ultraviolet nanowire nanolasers

被引:8792
作者
Huang, MH
Mao, S
Feick, H
Yan, HQ
Wu, YY
Kind, H
Weber, E
Russo, R
Yang, PD [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Environm Energy Technol Div, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1126/science.1060367
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Room-temperature ultraviolet Lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural Laser cavities with diameters varying from 20 to 150 nanometers and Lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission Linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized Laser Light sources. These short-wave-length nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.
引用
收藏
页码:1897 / 1899
页数:3
相关论文
共 19 条
[1]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[2]   Spatial confinement of laser light in active random media [J].
Cao, H ;
Xu, JY ;
Zhang, DZ ;
Chang, SH ;
Ho, ST ;
Seelig, EW ;
Liu, X ;
Chang, RPH .
PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5584-5587
[3]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[4]   Uniaxial locked epitaxy of ZnO on the a face of sapphire [J].
Fons, P ;
Iwata, K ;
Yamada, A ;
Matsubara, K ;
Niki, S ;
Nakahara, K ;
Tanabe, T ;
Takasu, H .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1801-1803
[5]  
Gaul DA, 2000, ADV MATER, V12, P935, DOI 10.1002/1521-4095(200006)12:13<935::AID-ADMA935>3.0.CO
[6]  
2-J
[7]   GAAS P-N-JUNCTION FORMED IN QUANTUM WIRE CRYSTALS [J].
HARAGUCHI, K ;
KATSUYAMA, T ;
HIRUMA, K ;
OGAWA, K .
APPLIED PHYSICS LETTERS, 1992, 60 (06) :745-747
[8]  
HASSE MA, 1991, APPL PHYS LETT, V59, P1272
[9]  
Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO
[10]  
2-H