Selected lifetime and oscillator strength measurements in Si II

被引：19

作者：

Schectman, RM ^{[1
]}

Povolny, HS ^{[1
]}

Curtis, LJ ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

ASTROPHYSICAL JOURNAL | 1998年 / 504卷 / 02期

关键词：

atomic data; ISM : atoms;

D O I：

10.1086/306120

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

We have remeasured the lifetimes of the 3s(2)4s and 3s(2)5s(2)S(1/2) levels in Si II using beam foil spectroscopic techniques. Measured values for the lifetimes and oscillator strengths derived from them are presented and compared with previous measurements and theoretical calculations. Agreement with recent theoretical calculations is now quite good: for 3s(2)4s it is excellent and for 3s(2)5s it is satisfactory, although the theoretical uncertainties in that calculation are still somewhat larger than desired.

引用

页码：921 / 924

页数：4

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