A novel electron-beam based photomask repair tool

被引:12
作者
Edinger, K [1 ]
Becht, H [1 ]
Becker, R [1 ]
Bert, V [1 ]
Boegli, V [1 ]
Budach, M [1 ]
Göhde, S [1 ]
Guyot, J [1 ]
Hofmann, T [1 ]
Hoinkis, O [1 ]
Kaya, A [1 ]
Koops, HWP [1 ]
Spies, P [1 ]
Weyrauch, B [1 ]
机构
[1] NaWoTec GmbH, D-64380 Rossdorf, Germany
来源
23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2003年 / 5256卷
关键词
D O I
10.1117/12.532866
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
High-resolution electron-beam assisted deposition and etching is an enabling technology for current and future generation photo mask repair. NaWoTec in collaboration with LEO Electron Microscopy has developed a mask repair beta tool capable of processing a wide variety of mask types, such as quartz binary masks, phase shift masks, EUV masks, and e-beam projection stencil masks. Specifications currently meet the 65 nm device node requirements, and tool performance is extendible to 45 nm and below. The tool combines LEO's ultra-high resolution Supra SEM platform with NaWoTec's e-beam deposition and etching technology, gas supply and pattern generation hardware, and repair software. It is expected to ship to the first customer in October this year. In this paper, we present the tool platform, its work flow oriented repair software, and associated deposition and etch processes. Unique features are automatic drift compensation, critical edge detection, and arbitrary pattern copy with automatic placement. Repair of clear and opaque programmed defects on Cr, TaN, and MoSi quartz masks, as well as on SiC and Si stencil masks is demonstrated. We show our development roadmap towards a production tool, which will be available by the end of this year.
引用
收藏
页码:1222 / 1231
页数:10
相关论文
共 7 条
[1]   Modeling of focused ion beam induced surface chemistry [J].
Edinger, K ;
Kraus, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3190-3193
[2]   CHARACTERIZATION AND APPLICATION OF MATERIALS GROWN BY ELECTRON-BEAM-INDUCED DEPOSITION [J].
KOOPS, HWP ;
KRETZ, J ;
RUDOLPH, M ;
WEBER, M ;
DAHM, G ;
LEE, KL .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B) :7099-7107
[3]   Damage-free mask repair using electron beam induced chemical reactions [J].
Liang, T ;
Stivers, A .
EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 :375-384
[4]  
MELNGAILIS J, 1991, P SOC PHOTO-OPT INS, V1465, P36, DOI 10.1117/12.47341
[5]  
Morgan JC, 1998, SOLID STATE TECHNOL, V41, P61
[6]  
STEWART DK, 1995, P SOC PHOTO-OPT INS, V2512, P398, DOI 10.1117/12.212805
[7]   CHARACTERISTICS OF GAS-ASSISTED FOCUSED ION-BEAM ETCHING [J].
YOUNG, RJ ;
CLEAVER, JRA ;
AHMED, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :234-241