Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

被引:12
作者
Brondijk, Jakob J. [1 ]
Maddalena, Francesco [1 ]
Asadi, Kamal [2 ]
van Leijen, Herman J. [1 ]
Heeney, Martin [3 ]
Blom, Paul W. M. [1 ,4 ]
de Leeuw, Dago M. [1 ,2 ]
机构
[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
[4] TNO Holst Ctr, NL-5605 KN Eindhoven, Netherlands
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 01期
关键词
carrier density; charge transport; doping; organic electronics; thiophenes; FIELD-EFFECT MOBILITY; CHARGE-TRANSPORT; TEMPERATURE-DEPENDENCE; CONDUCTIVITY;
D O I
10.1002/pssb.201147266
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 1015 to 1020?cm-3. Hole-only diodes were used for densities below 1016?cm-3 and field-effect transistors were used for carrier densities higher than 1018?cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range.
引用
收藏
页码:138 / 141
页数:4
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