Growth of optically-active InN with AlInN buffer by plasma-assisted molecular beam epitaxy

被引:3
作者
Jmerik, VN [1 ]
Vekshin, VA [1 ]
Shubina, TV [1 ]
Ratnikov, VV [1 ]
Ivanov, SV [1 ]
Monemar, B [1 ]
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词
D O I
10.1002/pssc.200303520
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
InN films have been grown by plasma-assisted MBE on Al2O3(0001) substrates using different buffer fabrication techniques: thermo-activated In diffusion into nitridated sapphire during InN buffer annealing and deposition of 20 nm AlxIn1-xN buffer layers with x = 0.1-0.5. Different In/N flux ratio conditions are employed. The InN epilayers demonstrate IR photoluminescence in the 0.6-1.0 mum range, with an ambiguous dependence of the PL intensity on structural quality of the films. The highest quality 0.5 mum thick InN layer having (0002) XRD Theta-rocking curve width below 400 arcsec and smooth continuous interface with the substrate does not show any PL. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA. Weinheim.
引用
收藏
页码:2846 / 2850
页数:5
相关论文
共 10 条
[1]  
Davydov VY, 2002, PHYS STATUS SOLIDI B, V230, pR4, DOI 10.1002/1521-3951(200204)230:2<R4::AID-PSSB99994>3.0.CO
[2]  
2-Z
[3]  
IVANOV SV, 2003, IN PRESS RES SIGNPOS
[4]  
Jmerik VN, 2001, PHYS STATUS SOLIDI A, V188, P615, DOI 10.1002/1521-396X(200112)188:2<615::AID-PSSA615>3.0.CO
[5]  
2-J
[6]  
Mamutin VV, 1999, PHYS STATUS SOLIDI A, V176, P247, DOI 10.1002/(SICI)1521-396X(199911)176:1<247::AID-PSSA247>3.0.CO
[7]  
2-I
[8]   Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films [J].
Ratnikov, V ;
Kyutt, R ;
Shubina, T ;
Paskova, T ;
Valcheva, E ;
Monemar, B .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6252-6259
[9]  
Yamamoto A, 2001, PHYS STATUS SOLIDI B, V228, P5, DOI 10.1002/1521-3951(200111)228:1<5::AID-PSSB5>3.0.CO
[10]  
2-E